Plasma Etching of SiO2 Using Modified Dielectric Barrier Discharge at Atmospheric Pressure

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：chichilela

【摘要】

：

【作者】

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J. S. Oh K. S. Min C. K. Kim G. Y. Yeom

【机构】

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Department of Advanced Materials Science & Engineering, Sungkyunkwan University

【出处】

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2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

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Atmospheric pressure SiO2 Etching Dielectric Barrier Discharge

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For the various electronic devices such as microelectromechanical system (MEMS) devices,thin film transistor-liquid crystal display (TFT-LCD) devices,flexible display devices,etc.,dielectric thin film materials such as SiO2 and Si3N4 are used and the patterning of those materials is carried out using wet etching or plasma etching.

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Plasma Etching of SiO2 Using Modified Dielectric Barrier Discharge at Atmospheric Pressure

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