Comparison of Electrical Characteristics of a Toroidal and Straight Type Reactor

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户:huanghoubin102
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
Transformer Coupled Plasma(TCP) is different from well known Inductively Coupled Plasma(ICP),because the former has a magnetic core between the primary coil and the secondary coil.
其他文献
The negatively charged nanoparticles are generated for prepare the silicon thin films in the SH4 plasma.It has been recognized that the nanoparticles contamination is a major problem in plasma process
Atmospheric pressure plasmas have been given much attention because of its cost performance and various possibilities for industrial applications.In general,atmospheric plasmas are maintained by the s
In this study,numerical calculation of the spatial electric field induced by biased electrode of 13.56 MHz was performed in high density plasmas.
To remove the dust particles about 100 cm long within the vacuum chamber,we have developed a large rectangular plasma device with size of 120(L) x 50(W) x 44(H) cm^3.
Dynamic processes of capacitively-coupled hydrogen plasmas generated by fast-rising pulsed high voltages at near-atmospheric pressure have been studied with the use of Particle-in-Cell (PIC) simulatio
Wave-cutoff method is an electron density measurement tool.In this method,an electron density can be acquired from the transmission spectra analysis of plasma.
When a laser is tuned between two excited energy levels of a gas in a DC discharge lamp,the discharge current will experience a temporary disturbance lasting tens or hundreds of microseconds known as
Complex Plasmas as the (,,)plasma state of soft matter" allow the study of fluid dynamics at the level of single particle kinetics.
Metal plasma is composed of metal ions produced by diffuse arc.The metal ions possess some special properties such as orientational movement and so on.
Inductively coupled plasmas (ICPs) produced in SF6 and its mixtures with other gases (Ar,O2,CF4,SiCl4,…) have been widely used for Si etching in a variety of applications,especially for deep trench et