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随着金属导线线宽的不断缩小,在90nm 技术以下,刻蚀残留物的存在会在应力迁移测试中形成高通孔电阻和空洞成核现象。物理氩离子预清洗是一种去除残留物的有效方法。但在应力迁移测试中发现,底部沟槽铜的二次溅射会导致器件的早期失效。反应性预清洗方法由于含有H +、H 类粒子而在减少C uO x 和清洗Si,N ,F,C ,O ,等蚀刻残留物时表现出其优越性。提出了针对传统PV D 工艺的反应性预清洗及PV D 击穿(沉积,刻蚀,沉积)工艺的解决方案。阻挡层击穿工艺减少了通孔电阻,提高了应力迁移性能,并通过薄钽沉积工序防止了铜的扩散从而保护了双嵌入斜面和错位通孔。此外,使电子阻塞和局部加热效应最小化的U 型界面,提高了电子迁移失效的平均时间,一致的、可重复的覆盖膜特性和良好的电参量测试结果已经证实了这种工艺的生产价值。
With the ever decreasing metal line width, the presence of etch residues forms high through-hole resistance and void nucleation in the stress-migratory test below 90 nm. Physical argon ion pre-cleaning is an effective method for removing residues. However, it was found in the stress transfer test that the secondary sputtering of the bottom trench copper resulted in early failure of the device. Reactive pre-cleaning methods show superiority in reducing C uO x and cleaning etching residues such as Si, N, F, C, O, etc. due to the inclusion of H +, H-type particles. A solution to the reactive pre-cleaning and PV D breakdown (deposition, etching, deposition) processes for the conventional PV D process was proposed. The barrier breakdown process reduces through-hole resistance, improves stress-transfer performance, and prevents copper diffusion through the thin tantalum deposition process thereby protecting the dual damascene bevel and misalignment via. In addition, a U-shaped interface that minimizes electrical blocking and localized heating effects increases the average time of electron migration failure, consistent, repeatable film properties and good electrical parametric test results have demonstrated the production value of this process .