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以丙酮和氢气为反应气体，用大偏流热丝ＣＶＤ法在硅衬底上沉积５０～１００μｍ金刚石薄膜制成新的导热绝缘层（热沉）来替代氧化铍陶瓷，测定了金刚石薄膜的热导率和绝缘电阻率，对绝缘电阻随时间降低的现象进行了理论解释，并采取了对应的表面处理使电阻率满足实用要求。解决了金刚石薄膜的金属化和焊接等技术难点，对封装后的大电流稳压集成电路样品进行了常规测试和１６８小时满负荷电老化试验，确认ＣＶＤ金刚石薄膜热沉达到了氧化铍陶瓷的水平
Using acetone and hydrogen as reactant gases, a new thermal conductive insulating layer (heat sink) was deposited on the silicon substrate by a large bias current hot-wire CVD method to deposit a 50-100μm diamond film instead of the beryllium oxide ceramic. The thermal conductivity of the diamond thin film was measured Rate and insulation resistance, the insulation resistance decreases with time the phenomenon of a theoretical explanation, and to take the corresponding surface treatment so that the resistivity to meet practical requirements. Solves the technical problems of metallization and soldering of the diamond thin film, conducts routine testing of the encapsulated high-current regulated integrated circuit samples and full-load aging test for 168 hours to confirm that the CVD diamond film heat sink has reached the level of beryllium oxide ceramics