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本文提出并分析了一种新颖的电荷耦合器件(CCD),这种器件是一种采用沟槽限定的金属-绝缘体-半导体-绝缘体-金属(MISIM)夹层结构。这种CCD具有很高的电荷容量和很深的光致载流子收集深度。沟槽CCD结构在X射线摄象以及高密度可见光和红外光摄象方面都具有潜在应用前景。
This paper presents and analyzes a novel charge-coupled device (CCD), a trench-confined metal-insulator-semiconductor-insulator-metal (MISIM) sandwich structure. This CCD has a very high charge capacity and a deep photo-carrier-collecting depth. Trench CCD structure has potential applications in X-ray imaging and high-density visible and infrared imaging.