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利用电子束蒸发和自动晶控技术制备了氧化铪薄膜,并对薄膜进行了退火处理。通过光致发光(PL)光谱、光致发光激发谱(PLE)和X射线衍射(XRD)等测试对HfO_2薄膜进行表征,研究了退火对HfO_2薄膜结构及发光特性的影响。室温下对薄膜进行了光致发光光谱测试发现存在4个发射峰,退火后的样品发光强度明显增强。对薄膜的激发谱测试发现激发谱与发射谱之间存在着斯托克斯位移。在退火处理后,X射线衍射表明薄膜的取向性和结晶度都明显提高,但是薄膜的激光损伤阈值(LIDT)没有变化。
The hafnium oxide thin films were prepared by electron beam evaporation and automatic crystal control technology, and the films were annealed. HfO_2 films were characterized by photoluminescence (PL) spectroscopy, photoluminescence excitation (PLE) and X-ray diffraction (XRD). The effects of annealing on the structure and luminescence properties of HfO_2 films were investigated. Photoluminescence spectra of the films at room temperature showed that there were 4 emission peaks and the luminescence intensity of the annealed samples was significantly enhanced. The excitation spectrum of the thin film shows that there is a Stokes shift between the excitation spectrum and the emission spectrum. After annealing, X-ray diffraction showed that the orientation and crystallinity of the films were significantly improved, but there was no change in the laser damage threshold (LIDT).