论文部分内容阅读
采用谱分割方法和分段模型对1.5μm波段的超辐射发光二极管(SLD)进行了仿真。为减小分段模型的分段数目和计算时间,对文献中常采用的计算每小段平均光功率(平均光子数密度)的3种主要方法进行了对比分析,结果表明:积分平均的方法具有显著的优势。与商用器件的测试结果相比,数值计算的输出光谱和电流-输出功率曲线基本相符。对高功率SLD的数值仿真表明:在有源区长度大于1mm后,输出功率的增长出现明显的饱和现象,纵向空间烧孔(LSHB)效应限制了增加有源区长度对输出功率增长的贡献。此外,对高功率SLD,使用忽略LSHB效应的单段模型计算输出功率可产生数倍的误差,因此,采用分段模型计入LSHB效应是必要的。
Spectral splitting method and segment model were used to simulate the 1.5μm band superluminescent diode (SLD). In order to reduce the number of segments and the calculation time of the segmentation model, three methods, which are commonly used in the literature to calculate the average optical power per unit time (average photon number density), are compared and analyzed. The results show that the method of integral averaging has significant The advantages. Compared with the test results of commercial devices, the calculated output spectrum and current - output power curve basically match. The numerical simulation of high power SLD shows that the output power increases obviously when the length of active area is larger than 1mm, and the LSHB effect limits the contribution of increasing the length of active area to the increase of output power. In addition, for high-power SLDs, calculating the output power using a single-segment model that ignores the LSHB effect can produce multiples of the error, so using the segmented model to account for the LSHB effect is necessary.