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对用LEO技术生长GaN材料的选择生长和横向生长速率进行了实验研究。结果表明,作为LEO生长基板的GaN层的表面质量是实现选择生长的关键,而图形方向对横向生长速率与纵向生长速率之比(L/V)也有重要的影响。通过选择合适的工艺条件,实现了GaN材料的LEO外延生长,所得样品的X射线衍射峰宽比用常规MOCVD法生长的样品减小了1/3。
Experimental studies on selective growth and lateral growth rate of GaN materials grown by LEO technology were performed. The results show that the surface quality of the GaN layer as a substrate for LEO growth is the key to achieving selective growth, while the pattern orientation also has an important effect on the ratio of lateral growth rate to longitudinal growth rate (L / V). By selecting the appropriate process conditions, the epitaxial growth of the LEO of the GaN material was achieved. The X-ray diffraction peak width of the obtained sample was reduced by 1/3 compared with the sample grown by the conventional MOCVD method.