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Lead iodide single crystal was grown by physical vapor transport method.Two radiation detectors with different configurations were fabricated from the as-grown crystal.The electrical and y-ray response properties at room temperature of the both detectors were investigated.It is found that the dark resistivity of the detectors are respectively 3×10~(10)Ω·cm for bias electric field parallel to crystal c-axis(E//c) and 2×10~8Ω·cm for perpendicular to crystal c-axis(E⊥c).The energy spectrum response measurement shows that both detectors were sensitive to ~(241) Am 59.5 keVγ-rays,and achieved a good energy resolution of 16.8%for the E⊥c-axis configuration detector with a full width at half maximum of 9.996 keV.
Lead iodide single crystal was grown by physical vapor transport method. Two radiation detectors with different configurations were fabricated from the as-grown crystal. The electrical and y-ray response properties at room temperature of the both detectors were investigated. It is found that the dark resistivity of the detectors are respectively 3 × 10 ~ (10) Ω · cm for bias electric field parallel to crystal c-axis (E // c) and 2 × 10 ~ 8Ω · cm for perpendicular to crystal c-axis (E ⊥c). The energy spectrum response measurement shows that all of the two detectors were sensitive to ~ (241) Am 59.5 keVγ-rays and achieved a good energy resolution of 16.8% for the E⊥c-axis configuration detector with a full width at half maximum of 9.996 keV.