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MnGa films were grown by magnetron sputtering on thermally oxidized Si(Si/SiO_2) and glass substrates. Films grown on single-crystal Si(100) substrate with different underlayers were prepared for comparison. It is found that the Si/SiO_2 substrate is more suitable for growing high-coercivity MnGa films than the glass substrate, which is the result of the isolated-island-like growth. A coercivity of 9.7 kOe can be achieved for the 10 nm MnGa films grown on Si/SiO_2 substrate at substrate temperature T_S of 450 °C.Optimized experimental conditions are specified by changing the thickness of the MnGa films and the temperature of the substrates.
Mn is grown by magnetron sputtering on thermally oxidized Si (Si / SiO 2) and glass substrates. Films grown on single-crystal Si (100) substrate with different underlayers were prepared for comparison. It is found that the Si / SiO 2 substrate is more suitable for growing high-coercivity MnGa films than the glass substrate, which is the result of the isolated-island-like growth. A coercivity of 9.7 kOe can achieved for the 10 nm MnGa films grown on Si / SiO 2 substrate at substrate temperature T_S of 450 ° C. Optimized experimental conditions are specified by changing the thickness of the MnGa films and the temperature of the substrates.