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采用电化学直流极化和交流阻抗技术 ,在有光照和黑暗条件下分别研究了半导体硅片在稀释氢氟酸溶液中的电化学特性 .两种电化学技术均对溶液中含有的微量铜 (1 0 - 9wt % -浓度水平 )非常敏感 ,但仅对溶液中的 1 0 - 6 wt % -浓度水平的非离子型表面活性剂敏感 .结果表明 ,有光照条件下在硅 /溶液界面上极易发生电化学反应 ,且该反应对硅表面性质起主导作用 .
The electrochemical properties of semiconductor wafers in dilute hydrofluoric acid solution were studied by electrochemical DC polarization and AC impedance respectively under both light and dark conditions.The two electrochemical techniques both investigated the electrochemical properties of trace amounts of copper 1 0-9 wt% -concentration level), but only sensitive to non-ionic surfactants at concentrations of 10-6 wt% -concentration in solution.The results show that under the irradiation of light at the silicon / solution interface Electrochemical reactions tend to occur, and the reaction plays a dominant role on the surface properties of the silicon.