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用国产分子束外延设备生长出性能优良、表面平整光洁的GaAs。不掺杂的P型GaAs空穴浓度为 2-8×10~(14)cm~(-3),室温迁移率为360-400cm~2/V·s.使用国产材料,纯度为 2N5并经我们“提纯”的 Be作为 P型掺杂剂.掺 Be的 P型GaAs空穴浓度范围从1.0 × 10~(15)至6×10~(15)cm~(-3).其室温迁移率与空穴浓度的关系曲线与国外文献的经验曲线相符.当空穴浓度为1—2 ×10~(15)cm~(-3)时,室温迁移率达 400cm~2/V·s.低温(77K)迁移率为 3500—7000cm~2/V·s.在4.2K下对不同空穴浓度的P型GaAs样品进行了光荣光测量和分析.
Using domestic molecular beam epitaxy equipment to grow good performance, smooth surface GaAs. The undoped P-type GaAs has a hole concentration of 2-8 × 10 ~ (14) cm -3 and a room temperature mobility of 360-400cm 2 / V · s. Using a domestic material with a purity of 2N 5 and We “purify” Be as a P-type dopant, and the Be concentration of P-doped Ga-type GaAs ranges from 1.0 × 10 15 to 6 × 10 15 cm -3 .The room-temperature mobility And the hole concentration curve is consistent with the empirical curves of foreign literature.When the hole concentration is 1-2 × 10 ~ (15) cm ~ (-3), the room temperature mobility reaches 400cm ~ 2 / V · s.Low temperature 77K) with a mobility of 3500-7000cm 2 / V · s.The glow-light measurement and analysis of P-type GaAs samples with different hole concentration were carried out at 4.2K.