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用最新发表的ＨｇＣｄＴｅ材料的光学常数对ＭＢＥ工艺生长的ＨｇＣｄＴｅ／ＣｄＴｅ／ＧａＡｓ材料的透射光谱进行了理论计算．对受生长工艺破坏的衬底背面再次进行抛光处理，消除因表面不平整引起的漫反射效应，使实验测量得到的光谱曲线与理论计算结果很好地吻合，由此得到的ＨｇＣｄＴｅ和ＣｄＴｅ外延层的厚度和解理面上用显微镜测量的数值相同，准确度优于±０．２μｍ．确定ＨｇＣｄＴｅ组分的准确度优于±０．００２５
The transmission spectra of HgCdTe / CdTe / GaAs grown by the MBE process were calculated theoretically using the optical constants of the newly published HgCdTe materials. The back surface of the substrate damaged by the growth process is polished again to eliminate the diffuse reflection effect caused by surface irregularity so that the experimentally measured spectral curve is in good agreement with the theoretical calculation result and the HgCdTe and CdTe epitaxial layers The thickness of the cleaved surface is the same as the value measured by a microscope, and the accuracy is better than ± 0.2 μm. The accuracy of the HgCdTe composition was better than ± 0.0025