对超深亚微米PMOS器件的负栅压温度不稳定性(NBTI)退化机理进行了研究.主要集中在对器件施加NBT和随后的PBT应力后器件阈值电压的漂移上.实验证明反型沟道中空穴在栅氧中的俘获以及氢分子在栅氧中的扩散是引起NBTI退化的主要原因.当应力条件变为PBT时,陷落的空穴可以快速退陷,但只有部分氢分子可以扩散回栅氧与衬底界面钝化硅悬挂键,这就导致了PBT条件下阈值电压只能部分恢复. Degradation mechanisms of negative gate voltage temperature instability (NBTI) of ultra-deep submicron PMOS devices are studied, mainly focusing on the device threshold voltage drift after applying NBT and subsequent PBT stress.The experiment shows that the inversion channel The trap of hollow holes in the gate oxide and the diffusion of hydrogen molecules in the gate oxide are the main reasons for the degradation of NBTI. When the stress conditions change to PBT, the trapped holes can retreat quickly, but only part of the hydrogen molecules can diffuse back The gate oxide and the substrate interface passivate silicon dangling bonds, which leads to the threshold voltage recovery only partially under PBT conditions.