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Subthreshold characteristics of vertical tunneling field effect transistors(VTFETs) with an nC-pocket in the pC-source are studied by simulating the transfer characteristics with a commercial device simulator.Three types of subthreshold characteristics are demonstrated for the device with different pocket thicknesses and doping concentrations.Band diagram analysis shows that such a VTFET can be treated as a gate-controlled tunnel diode connected in series with a conventional n-channel metal-oxide-semiconductor FET.This VTFET can work either as a TFET or an n-MOSFET in the subthreshold region,depending on the turn-on sequence of these two components.To our knowledge,this is the first time such a device model has been used to explain the subthreshold characteristics of this kind of VTFET and the simulation results demonstrate that such a device model is convictive and valid.Our results indicate that the design of the nC pocket is crucial for such a VTFET in order to achieve ultra-steep turn-on characteristics.
Subthreshold characteristics of vertical tunneling field effect transistors (VTFETs) with an nC-pocket in the pC-source are studied by simulating the transfer characteristics with a commercial device simulator. Thh types of subthreshold characteristics are demonstrated for the device with different pocket thicknesses and doping concentrations.Band diagram analysis shows that such a VTFET can be treated as a gate-controlled tunnel diode connected in series with a conventional n-channel metal-oxide-semiconductor FET. This VTFET can work either as a TFET or an n-MOSFET in the subthreshold region, depending on the turn-on sequence of these two components.To our knowledge, this is the first time such a device model has been used to explain the subthreshold characteristics of this kind of VTFET and the simulation results demonstrate that such a device model is convictive and valid. Our results indicate that the design of the nC pocket is crucial for such a VTFET in order to achieve ultra-steep t urn-on characteristics.