论文部分内容阅读
对等离子增强化学气相淀积（ＰＥＣＶＤ）和低压化学气相淀积（ＬＰＣＶＤ）两种方法制备掺杂多晶硅膜进行了详细的实验研究，通过时两者进行比较，对淀积的动力学特性、淀积膜的结构、膜的电特性与工艺条件的关系等进行了分析讨论。结果表明，采用ＰＥＣＶＤ方法，多晶硅膜的生长速率几乎不受淀积温度和杂质掺入量的影响，且较采用ＬＰＣＶＤ方法的生长速率提高一个量级；膜的电导率随杂质的掺入可提高六个量级，且与淀积温度无关，其片内均匀性为±２％。
A detailed experimental study on the preparation of doped polycrystalline silicon films by PECVD and LPCVD has been carried out. By comparison, the kinetics of deposition, The structure of the film, the electrical properties of the film and the relationship between the process conditions were discussed. The results show that the growth rate of polycrystalline silicon film is almost independent of the deposition temperature and the amount of impurity doped by PECVD, and the growth rate of polycrystalline silicon film is one order of magnitude higher than that of LPCVD. The conductivity of the polycrystalline silicon film can be increased with the incorporation of impurities. Six orders of magnitude, regardless of the deposition temperature, the on-chip uniformity is ± 2%.