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降低动态功耗需要快速地开关功率半导体,但是,快速开关IGBT带来的新挑战,就是对关断电压峰值有特别强烈的影响。关断过程中u_(ce-)和i_c测量分析说明了直流母线寄生电感和模块电感之间的相互作用。这使得在给定的应用中非常容易分析出的薄弱环节并在模拟中发现最大的潜力。
Reducing dynamic power requires fast switching of power semiconductors, but the new challenge of fast switching IGBTs has a particularly strong impact on the turn-off voltage spikes. The analysis of u_ (ce-) and i_c measurements during shutdown shows the interaction between the DC bus parasitic inductance and the module inductance. This makes it very easy to analyze weaknesses in a given application and find the greatest potential in simulations.