一种新型具有最小面积的只读存储器(ROM)已经研制出来。级间使用无比线路,其工艺过程可与使用耗尽型负载的硅栅金属氧化物半导体(MOS)大规模集成(LSI)相容。新型 ROM存储单元的内容由选择 MOS 管的阈值方式决定,或者用增强型或者用耗尽型。和一般的 ROM结构的差别在于后者存储单元内容是由栅氧化层的厚度来区分的。ROM 每单元的尺寸仅196μm~2,它较一般的硅栅 ROM 减小45％。 A new type of read-only memory (ROM) with the smallest area has been developed. The use of incomparable lines between stages allows the process to be compatible with silicon-on-a-metal-oxide semiconductor (MOS) LSIs that use depleted loads. The contents of the new ROM cells are determined by the threshold mode of the MOS transistors selected, either in enhanced or depletion mode. The difference with the general ROM structure is that the latter memory cell content is differentiated by the thickness of the gate oxide. The size of ROM per unit is only 196μm ~ 2, which is 45% less than the average silicon gate ROM.