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利用真空下氩气保护液相重结晶的方法，对热蒸镀和磁控贱射制得的Insb薄膜进行热处理．X射线衍射和组织分析的结果表明：热处理前薄膜为Insb，In，Sb各相的混合物；重结晶后，基本为InSb单相，InSb晶粒呈规则状外形长大．热处理后室温下的电子迁移率大大提高，由原来的1．31×104cm2／（V·s）提高到4．47×104cm2／（V·s）（热蒸镀）和2．15×103cm2／（V·s）提高到2．04×104cm2／（V·s）（磁控溅射）．
Insb film prepared by thermal evaporation and magnetron sputtering was heat-treated by vacuum recrystallization of argon solution. The results of X-ray diffraction and microstructure analysis show that the thin film is a mixture of Insb, In and Sb phases before heat treatment. After recrystallization, the film is essentially single-phase InSb and the InSb grains grow regularly in shape. After the heat treatment, the electron mobility at room temperature greatly increased from 1.31 × 104cm2 / (V · s) to 4.47 × 104cm2 / (V · s) (thermal evaporation) and 2.15 × 103cm2 / (V · s) to 2.04 × 10 4 cm 2 / (V · s) (magnetron sputtering).