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超大规模集成电路已经进入了运用亚微细粒加工技术的阶段,今后微细化还会有进一步发展。以存储器为代表的元件使用电压虽然同过去一样保持5伏不变,但微细化的进展使加工技术上的各种制约条件更加严格了。例如蚀刻的栅绝缘膜厚发展到100埃左右,若进行更厚的多晶硅栅电极加工,对选择幅度及低损伤加工的要求将会愈加严格。而化学汽相沉积技术成膜时则要求低温化,低损伤化以及平坦化沉积(良好的台阶高差复盏性能)等。可以预
Very large-scale integrated circuits have entered the stage of using submicron particle processing technology, the future will have further development of miniaturization. Although the voltage of the device represented by the memory remains unchanged at 5 volts as in the past, the progress of miniaturization has made the processing technology more restrictive. For example, the thickness of an etched gate insulating film is about 100 angstroms. If a thicker polysilicon gate electrode is processed, the requirements for selective amplitude and low damage processing will be more and more stringent. The chemical vapor deposition technology is required when the film is low temperature, low damage and flat deposition (good step height caliper performance) and so on. Can be pre-set