红外微象技术是测量晶体管结温分布的最先进方法。本文对星用(G)CG462型微波晶体管,进行了不同功率强度与峰值结温分布的测量。由红外热象图取得管芯温度分布形貌,经计算机处理后建立了功率-结温的定量关系,参照最高结温175℃,拟定出合适的高温贮存和直流功耗的筛选条件,既能防止应力不足,又避免过应力失效。实践表明,红外微象技术对星用高可靠器件是非常理想的予筛手段。 Infrared micro-imaging technology is the most advanced method of measuring junction temperature distribution of transistors. In this paper, we use the CG462 microwave transistor for satellite to measure the different power intensity and peak junction temperature. The temperature profile of the die was obtained from the infrared thermogram, and the quantitative relationship between power and junction temperature was established after computer processing. With reference to the maximum junction temperature of 175 ℃, suitable screening conditions for high temperature storage and DC power consumption were established. To prevent the lack of stress, but also to avoid over-stress failure. Practice shows that the infrared micro-astronomical high-reliable devices with the device is a very good screening method.