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通过傅里叶变换红外光谱、拉曼光谱和光致发光谱测试手段分析了由HIRFL提供的高能238U离子辐照AlN晶体薄膜的光学特性变化。辐照后出现了A1(To),A1(Lo),E1(To)和E2等声子振动吸收模式,并且辐照使其在样品近表面Al—N等振动模式遭到破坏后悬空的Al—键很快与空气中的O离子发生结合,形成了Al—O键。综合分析得出了蓝光发射带是与O离子相关的VAl-ON-3N和VAl-2ON-2N两种类型缺陷以及F-型缺陷聚合所致;绿光发射带是由基底中Al原子产生的价带之间的跃迁所致。
The optical properties of AlN thin films irradiated by high energy 238U ion supplied by HIRFL were analyzed by Fourier transform infrared spectroscopy, Raman spectroscopy and photoluminescence spectroscopy. The phonon vibration absorption modes of A1 (To), A1 (Lo), E1 (To) and E2 appeared after irradiation, and were irradiated by Al to make the near-surface Al- - Bonds soon combine with O ions in the air to form Al-O bonds. It is concluded that the blue emission band is caused by two types of VAl-ON-3N and VAl-2ON-2N defects associated with O ions and F-type defect polymerization. The green emission band is generated by Al atoms in the substrate Due to the transition between the valence band.