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为了满足越来越多的特殊结构纳米电子器件的制作要求,亟需进一步提高电子束光刻的分辨率与质量,选择适合的高分辨率电子束抗蚀剂材料显得尤为重要。从曝光剂量以及显影与烘烤过程中具体工艺条件的影响等方面对三种新型抗蚀剂材料HSQ,Calixarene和ARN7520进行了电子束曝光性能的研究,同时也对三者的优缺点进行了讨论。通过实验可知,三种新型抗蚀剂均有小于50 nm的高曝光分辨率。HSQ与衬底有更好的附着力,具有较高的机械强度和对比度,在小面积密集图形的制作中具有较好的性能。而ARN7520具有较高的灵敏度,受电子束邻近效应的影响较小,更适合复杂版图的制作。Calixarene虽然也具有较高的曝光分辨率,但过低的灵敏度严重限制了其实用性。
In order to meet more and more fabrication requirements of nanostructured electronic devices with special structures, it is urgent to further improve the resolution and quality of electron beam lithography. It is particularly important to select a suitable high-resolution electron beam resist material. The effects of electron beam exposure on the three new resist materials, HSQ, Calixarene and ARN7520, were studied in terms of exposure dose and the influence of the specific process conditions during development and baking. The advantages and disadvantages of the three were also discussed . Experiments show that all three new resists have high exposure resolution of less than 50 nm. HSQ has better adhesion with the substrate, has higher mechanical strength and contrast, and has better performance in the production of small-area dense patterns. The ARN7520 has high sensitivity, less affected by the electron beam proximity effect, more suitable for the production of complex layout. Although Calixarene also has high exposure resolution, but too low sensitivity severely limits its practicality.