论文部分内容阅读
采用无钯化学镀Cu法对纳米石墨微片表面进行处理,并对其制备工艺进行了探究,旨在得到一种导电胶用新型导电填料。研究结果表明:当改性剂浓度为3 g/L、AgNO3浓度为3 g/L、氨水浓度为40 g/L、m(无水乙醇)∶m(水)=9∶1、活化温度为50℃和活化时间为1.5 h时,纳米石墨微片表面镀上了一层致密而均匀的金属Cu层,Cu层的厚度约为100 nm,Cu沉积量超过60%(相对于纳米石墨微片质量而言)。
The palladium-free electroless Cu plating method was used to treat the surface of nano-graphite micro-chip, and its preparation process was explored in order to obtain a new type of conductive filler for conductive adhesive. The results showed that when the modifier concentration was 3 g / L, AgNO3 concentration was 3 g / L, ammonia concentration was 40 g / L, m (absolute ethanol) At 50 ℃ and activation time of 1.5 h, a dense and even layer of metallic Cu layer was deposited on the surface of nanocrystalline graphite microtablets. The thickness of Cu layer was about 100 nm and the deposition amount of Cu was over 60% (relative to that of nanocrystalline graphite microtablets Quality).