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用正电子湮没寿命和多普勒加宽方法研究了中子辐照氢气区熔硅单晶的等时退火行为.观测到324±12ps的寿命组分是正电子在双空位湮没寿命,是主要的长寿命组分.450±14ps是正电子在四空位湮没寿命。324ps寿命组分在450℃附近退火消失后,它又以较高的强度在530—800℃的温度范围出现.对不同温度退火的晶体取得的基块寿命不是常数值而是随退火温度有规律的变化.这些异常的退火行为归结为中子辐照硅中所诱导的空位缺陷与氢的相互作用及其对晶格的影响.
The positron annihilation lifetime and Doppler broadening method were used to study the isochronal annealing behavior of neutron-irradiated molten silicon single crystals. It is observed that the life component of 324 ± 12ps is the positron annihilation lifetime of positrons Long-lived components .450 ± 14ps is the positron annihilation lifetime in the four vacancy. 324ps life components disappear after annealing near 450 ℃, it again with higher intensity in the temperature range of 530-800 ℃. Crystals annealed at different temperatures to obtain the basement life is not a constant but with the annealing temperature regularly .These abnormal annealing behaviors are attributed to the interaction between vacancy defects induced by neutron irradiated silicon and hydrogen and their influence on the crystal lattice.