前言 异质结概念出现较早,但它仍是一个新的领域,特别是近年来在材料科学和电子科学领域里已引人注目。这次日本东京工业大学高桥清来华座谈介绍了异质结发展概况,异质结的能带结构和输运特性。现将其内容概述如下: 一、异质结发展概况 异质结广义讲是指两类不同种类物质的接触。如以固体为主可分三种状态,即固体-气体、固体-液体、固体-固体。如固体是半导体又可分为半导体-金属(金属半导体接触一肖特基势垒) 半导体-半导体(异质结)、半导体-绝缘体(MIS MOS)。 因此,这里异质结一般就是指两种不同种类半导体的接触。 异质结是在结型晶体管出现不久就被提出来了,1951年肖克莱提出了具有高注入效率的宽禁带发射极晶体管,由于当时两种半导体接触的生长技术还没发展起来,因此这种晶体管没有成为现实,以后的五、六年异质结没有什么发展。1959年以后随着气相外延技术的出现,异质结的形成成为现实。最初是制备了Ge-GaAs异质结,测定了I-V Introduction Heterojunction concept appeared earlier, but it is still a new field, especially in recent years in the field of materials science and electronic science has attracted much attention. Takahashi, Japan Tokyo Polytechnic University, came to China to discuss the development overview of heterojunction, heterojunction band structure and transport characteristics. Now its content is summarized as follows: First, the development of heterogeneous junction heterogeneous knot Generalized refers to the contact of two different types of material. If the main solid can be divided into three states, namely solid - gas, solid - liquid, solid - solid. If the solid is a semiconductor can be divided into semiconductor - metal (metal semiconductor contact Schottky barrier) semiconductor - semiconductor (heterojunction), semiconductor - insulator (MIS MOS). Therefore, the heterojunction here generally refers to the contact of two different kinds of semiconductors. Heterojunction was proposed shortly after the junction transistor appeared. In 1951 Shockley proposed a wide bandgap emitter transistor with high injection efficiency. Since the growth of the two semiconductor contacts was not developed at that time, This transistor has not become a reality, after five or six years heterogeneous junction no development. With the advent of vapor phase epitaxy after 1959, the formation of heterojunctions became a reality. Ge-GaAs heterostructures were initially prepared and I-V was measured