【摘 要】
：
We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator (SOI) dual-coupled micro-ring embedded with p-i-n diodes. A crosstalk of -23 dB is obtained in the 20 \mu m-radius micro-ring with the well-designing asym
【机 构】
：
StateKeyLaboratoryonIntegratedOptoelectronics,InstituteofSemiconductors,ChineseAcademyofSciences,Bei
【出 处】
：
ChineseOpticsLetters
论文部分内容阅读
We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator (SOI) dual-coupled micro-ring embedded with p-i-n diodes. A crosstalk of -23 dB is obtained in the 20 \mu m-radius micro-ring with the well-designing asymmetric dual-coupling structure. By optimizations of the doping profiles and the fabrication processes, the sub-nanosecond switch-on/off time of
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