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采用双离子束共溅射沉积方法制备了两种复合硅基薄膜SiOxCy和SiOxNy薄膜,对两种薄膜进行后退火处理,并分别对样品进行PL、FTIR、XPS谱测试分析,比较退火前后的发光及结构的变化。两种样品的光致发光测试谱(PL)表明:退火前后都有两个发光峰位-都存在470nm的发光峰位,它来自于硅基薄膜中中性氧空位缺陷(O3≡Si-Si≡O3),是由于氧原子配位的二价硅的单态-单态之间的跃迁所致,其发光强度随退火温度的升高而变化。进一步的FTIR和XPS的测试谱表明另外一个发光峰位420nm(SiOxCy薄膜)和400nm(SiOxNy薄膜)分别来自于掺杂杂质(C和N)与硅基薄膜中的Si、O组成的复合结构。而两种样品经过退火处理后掺杂所引起的发光峰位强度随退火温度的升高而增强,说明退火温度的升高有利于发光机制的形成。
Two kinds of SiOxCy and SiOxNy thin films were prepared by dual-ion co-sputtering deposition. The films were annealed and annealed. The PL, FTIR and XPS spectra of the films were tested and compared before and after annealing And structural changes. The photoluminescence spectra (PL) of the two samples showed that there were two luminescence peaks before and after annealing - the luminescence peaks at 470nm, which originated from the neutral oxygen vacancies (O3≡Si-Si ≡O3) is due to the transition between the singlet-singlet states of divalent silicon coordinated by oxygen atoms, and its luminescence intensity changes with the increase of annealing temperature. Further FTIR and XPS test spectra indicate that the other emission peak at 420 nm (SiOxCy thin film) and 400 nm (SiOxNy thin film) respectively come from the composite structure of doped impurities (C and N) and Si and O in the Si-based thin film. The intensity of the luminescence peak due to the doping of the two samples after the annealing treatment increases with the increase of the annealing temperature, indicating that the increase of the annealing temperature is favorable for the formation of a light-emitting mechanism.