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A novel partial silicon-on-insulator (PSOI) high voltage device with a low-k (relative permittivity) dielectric buried layer (LK PSOI) and its breakdown mechanism are presented and investigated by MEDICI.At a low k value the electric field strength in the dielectric buried layer (E I) is enhanced and a Si window makes the substrate share the vertical drop,resulting in a high vertical breakdown voltage;in the lateral direction,a high electric field peak is introduced at the Si window,which modulates the electric field distribution in the SOI layer;consequently,a high breakdown voltage (BV) is obtained.The values of EI and BV of LK PSOI with kI=2 on a 2 μm thick SOI layer over 1 μm thick buried layer are enhanced by 74% and 19%,respectively,compared with those of the conventional PSOI.Furthermore,the Si window also alleviates the self-heating effect.
A novel partial silicon-on-insulator (PSOI) high voltage device with a low-k (relative permittivity) dielectric buried layer (LK PSOI) and its breakdown mechanism are presented and investigated by MEDICI. At a low k value the electric field strength in the dielectric buried layer (EI) is enhanced and a Si window makes the substrate share the vertical drop, resulting in a high vertical breakdown voltage; in the lateral direction, a high electric field peak is introduced at the Si window, which modulates the The electric field distribution in the SOI layer; the high breakdown voltage (BV) is obtained. The values of EI and BV of LK PSOI with kI = 2 on a 2 μm thick SOI layer over 1 μm thick buried layer are enhanced by 74 % and 19%, respectively, compared with those of the conventional PSOI. Futurertherm, the Si window also alleviates the self-heating effect.