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设计了一种超低功耗、无片上电阻、无双极型晶体管的基于CMOS亚阈值特性的基准电压源。采用Oguey电流源结构来减小静态电流,从而降低功耗,并加入工作于亚阈值区的运算放大器,在保证低功耗的前提下,显著提高了电源电压抑制比。采用1.8V MOS管与3.3V MOS管的阈值电压差进行温度补偿,使得输出电压具有超低温度系数。采用共源共栅电流镜以提高电源电压抑制比和电压调整率。电路基于SMIC 0.18μm CMOS工艺进行设计和仿真。仿真结果表明,在-30℃~125℃温度范围内,温漂系数为9.3×10-6/℃;电源电压为0.8~3.3V时,电压调整率为0.16%,电源电压抑制比为-58.2dB@100 Hz,电路功耗仅为109nW,芯片面积为0.01mm2。
An ultralow power CMOS reference voltage source based on CMOS sub-threshold transistor without bipolar transistor is designed. Oguey current source structure to reduce the quiescent current, thereby reducing power consumption, and joined the sub-threshold operation of the op amp, to ensure low power consumption under the premise of significantly improving the supply voltage rejection ratio. Adopt the threshold voltage difference of 1.8V MOS tube and 3.3V MOS tube to carry on the temperature compensation, make the output voltage have ultra-low temperature coefficient. Using cascode current mirror to improve power supply voltage rejection ratio and voltage regulation. The circuit is designed and simulated based on the SMIC 0.18μm CMOS process. The simulation results show that the temperature drift coefficient is 9.3 × 10-6 / ℃ in the range of -30 ℃ to 125 ℃, the voltage regulation rate is 0.16% and the power supply voltage rejection ratio is -58.2 when the power supply voltage is 0.8 ~ 3.3V dB @ 100 Hz, circuit power consumption is only 109nW, chip area is 0.01mm2.