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采用磁控溅射方法在Si基底上制备了Au/Cu薄膜。利用扫描俄歇微探针(SAM)纳米化分析技术进行表面成分分析与深度剖析,研究在真空环境中,紫外辐照、微氧氧含量及处理温度等因素作用对Au/Cu薄膜界面结构的影响。实验结果表明:环境温度的升高,使薄膜内缺陷增加,为Cu原子的扩散提供了更多的扩散通道;紫外辐照产生了等同的热效应,加剧了Cu原子在Au层中的扩散;微氧的存在诱导了Cu原子的扩散。三种因素协同作用下,诱导迁移扩散机制在室温下形成,并于处理温度达到100℃后趋于稳定。
Au / Cu thin films were prepared on Si substrates by magnetron sputtering. The surface composition analysis and depth analysis were carried out by scanning Auger microprobe (SAM) nanometer analysis technology. The effects of ultraviolet irradiation, micro oxygen content and processing temperature on the interfacial structure of Au / Cu films were investigated in vacuum environment. influences. The experimental results show that the increase of ambient temperature increases the defects in the film and provides more diffusion channels for the diffusion of Cu atoms. The UV radiation has the same thermal effect and aggravates the diffusion of Cu atoms in the Au layer. The presence of oxygen induces the diffusion of Cu atoms. Under the synergistic action of three factors, the mechanism of induced migration and diffusion was formed at room temperature and stabilized after the treatment temperature reached 100 ℃.