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用密度梯度量子模型定量研究了磷化铟(InP)复合沟道高电子迁移率晶体管(HEMT)的击穿特性,考虑了复合沟道内碰撞电离以及沟道量子效应,重点研究了器件击穿电压随In0.7Ga0.3As沟道厚度的变化关系,提出了提高击穿电压的方法,采用商用器件模拟软件Sentaurus模拟了器件的开态击穿电压,对比了实验和模拟的结果.研究表明:适当减小In0.7Ga0.3As沟道层的厚度可以在保持器件饱和电流基本不变的前提下大幅度提高开态击穿电压,这对于提高InP基HEMT的功率性能具有重要意义.
The density gradient quantum model was used to quantitatively study the breakdown characteristics of indium phosphide (InP) composite channel high electron mobility transistor (HEMT). Taking into account the impact ionization and channel quantum effects in the compound channel, the device breakdown voltage With the variation of the channel thickness of In0.7Ga0.3As, a method to improve the breakdown voltage is proposed. Sentaurus, a commercial device simulation software, is used to simulate the on-state breakdown voltage of the device, and the experimental and simulation results are compared. Reducing the thickness of the In0.7Ga0.3As channel layer can greatly improve the on-state breakdown voltage while keeping the saturation current of the device substantially unchanged, which is of great significance for improving the power performance of the InP-based HEMT.