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当功率MOSFET或IGBT用作高压侧开关时,对它的驱动有严格要求,当前有几种技术可用来实现这种功能。本文主要介绍电压自举法的特点、典型电路、参数选择及应用。
When a power MOSFET or IGBT is used as a high-side switch, there are strict requirements on its driving. There are several technologies currently available to accomplish this function. This article introduces the characteristics of voltage bootstrap method, the typical circuit, parameter selection and application.