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为了定量地得到磁场梯度对a Si∶H薄膜沉积速率的影响 ,对单磁场线圈分散场MWECRCVD系统等离子体室和沉积室中用三种方法得到的磁场形貌进行了研究 .通过洛伦兹拟合的方法定量地得到了这些磁场形貌的磁场梯度 .结果表明 ,样品台下面放置钐钴永磁体并使磁场线圈电流为 137 7A时其衬底附近磁场梯度值最大 ,样品台下面无钐钴永磁时 ,磁场线圈电流分别为 137 7A和 115 2A的磁场梯度值依次为次之和最小 .制备a Si∶H薄膜时 ,在衬底附近具有高的磁场梯度值可以得到高的沉积速率 .通过红外吸收谱技术分析 ,虽然样品台下面放置钐钴永磁体并使磁场线圈电流为 137 7A下能得到最大的沉积速率 ,但是沿样品台半径方向沉积速率呈现很明显的不均匀分布 .
In order to quantitatively obtain the influence of magnetic gradient on the deposition rate of a Si:H thin films, the magnetic field topography obtained by three methods in the plasma chamber and the deposition chamber of MWECRCVD system in a single magnetic field coil was studied. The magnetic field gradients of these magnetic fields were quantitatively obtained.The results show that the magnetic field gradient around the substrate is the largest when the samarium cobalt permanent magnet is placed under the sample stage and the magnetic field coil current is 137 7A, In the case of permanent magnets, the magnetic field gradient currents of 137 7A and 115 2A are the next and the smallest, respectively.When a Si: H thin film is prepared, high magnetic field gradient near the substrate can obtain high deposition rate. Through the infrared absorption spectroscopy analysis, although the samarium cobalt permanent magnet is placed under the sample stage and the maximum deposition rate can be obtained at the field coil current of 137 7A, the deposition rate along the radial direction of the sample stage shows a significant non-uniform distribution.