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随着超大规模集成电路的发展,对新材料和新工艺提出了更多的要求,希望材料有类似金属的低电阻率,十分好的热稳定性,容易形成,不易出现电迁移现象等等。这样就使难熔金属(如 Ti,W,Mo,Ta 等)及其硅化物作为栅电极,互连线和欧姆接触材料在 ULSI 中得到了十分广泛的应用~([1])MOS 超大规模集成电路中的源、漏扩散区和多晶硅栅条上利用自对准的方法同时形成一难熔金属硅化物层,从而得到自对准硅化物/多晶硅复合栅结构,可以同时得到低接触电阻率的欧姆接触和高导电性的互连线~([2]),这样可以大大提高 ULSI 的速度和性能。
With the development of very large scale integrated circuits, more requirements are put forward on new materials and new processes. It is hoped that the materials have the similar low resistivity of metals, very good thermal stability, easy formation and less electromigration phenomenon. This makes the refractory metal (such as Ti, W, Mo, Ta, etc.) and its silicide as the gate electrode, interconnect and ohmic contact materials have been widely used in the ULSI ~ ([1]) MOS large scale In the integrated circuit, a salicide / polysilicon gate structure is formed by simultaneously forming a refractory metal silicide layer on the source / drain diffusion region and the polysilicon gate by a self-aligning method, so that a low contact resistivity Ohm contact and high conductivity interconnection ~ ([2]), which can greatly improve ULSI speed and performance.