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从不同栅电压下异质结能带和电子气状态研究出发,研究了GaN HFET栅压变化时的异质结充放电过程。通过自洽求解二维泊松方程和薛定谔方程计算出不同偏置电压下内、外沟道的导带底。引入局域电子气势垒来甄别沟道中的漂移电子气和局域电子气的不同输运行为。详细研究了栅、漏偏置变化时的异质结充放电和局域电子气充放电。从这两种新的充放电效应出发,建立起描述沟道动态电流的电压控制模型,成功解释了陷阱俘获电荷模型不能解释的各类动态电流实验。
Based on the study of heterojunction energy bands and electron states at different gate voltages, the charge-discharge process of heterojunction during the gate voltage variation of GaN HFET was studied. Solve the two-dimensional Poisson equation and Schrodinger equation by self-consistent solution to calculate the conduction band bottom of the inner and outer channels under different bias voltages. A local electron gas barrier is introduced to discriminate the different transport behaviors of drift electron gas and local electron gas in the channel. Heterojunction charge-discharge and local electron gas charge-discharge at gate and drain bias changes were studied in detail. Based on these two new charge-discharge effects, a voltage control model describing the channel dynamic current is established, and various dynamic current experiments that can not be explained by trap trapped charge model are successfully explained.