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采用多晶硅薄膜材料作为热敏电阻材料，以普通的ＩＣ工艺及微机械加工技术研制成功了在室温下工作的红外微测辐射热计，其多晶硅电阻温度系数为－２％℃－１，探测率Ｄ＊达２×１０８ｃｍ·Ｈｚ１／２·Ｗ－１．
The polycrystalline silicon thin film material is used as a thermistor material, and an infrared microbolometer working under room temperature is successfully developed by ordinary IC technology and micromachining technology. The polysilicon resistance temperature coefficient is -2% ° C. -1, the detection rate D * is 2 × 108 cm · Hz1 / 2 · W-1.