近年来发现,在磷化镓透明衬底上气相外延生长掺氮磷砷化镓时,由于等电子陷阱杂质氮这一发光中心的引进,使高x值的GaAs_(1-x)P_x(x>0.5)由低发光效率的间接跃迁型能带结构,转变为具有高发光效率的“类直接跃迁”型能带结构GaAS_(1-x)P_x:N(x>0.5),这种材料可用来制造橙红色和黄色发光器件.由于较短波长具有较高的视感度,其实际流明效率超过用GaAs_(0.06)P_(0.04)/GaAs制成的红色发光器件. In recent years, it has been found that GaAs_ (1-x) P_x (x) has high v-value due to the introduction of the luminescence center such as nitrogen, which is an impurity impurity, when vapor-phase epitaxial growth of gallium arsenide doped gallium arsenide > 0.5) is transformed into GaAs_ (1-x) P_x: N (x> 0.5) with “direct transition” band structure with high luminescence efficiency by the indirect transition band structure with low luminescence efficiency. This material is available To produce orange-red and yellow light-emitting devices, the actual lumen efficiency exceeds that of the red light-emitting devices made of GaAs_ (0.06) P_ (0.04) / GaAs due to the higher sensitivity of the shorter wavelengths.