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针对InGaN/GaN多量子阱LED,分析了占据能态高于势垒的载流子和低于势垒的载流子参与的电流输运机制,从而推导出对应能态电流输运机制下的电流-电压关系,以及理想因子与温度的变化规律。实验结果证实,在低注入强度下,由材料缺陷引入的深能级辅助隧穿输运机制占主导,电流电压特性符合相应的推导结果,随着注入强度的增大,参与扩散-复合输运机制的载流子逐渐增加,温度对输运机制的影响逐渐增大。
For the InGaN / GaN multiple quantum well (LED), the current transport mechanism which occupies more than the potential barrier and lower than the barrier carriers is analyzed, and the corresponding current transfer mechanism is deduced. Current-voltage relationship, and the ideal factor and temperature changes. The experimental results show that under the low injection strength, the deep-level auxiliary tunneling transport mechanism dominated by material defects and the current-voltage characteristics conform to the corresponding deduced results. With the increase of the injection intensity, it participates in the diffusion-compound transport The carrier of the mechanism is gradually increased, and the influence of temperature on the transport mechanism is gradually increased.