对在ＧａＡｓ（００１）、Ａｌ２Ｏ３（０００１）和Ｓｉ（１１１）等衬底上ＭＯＣＶＤ技术生长的ＧａＮ薄膜进行了背散射几何配置下的喇曼散射测试分析和比较，观察到了α相ＧａＮ的Ａ１（ＬＯ）模、Ａ１（ＴＯ）模、Ｅ１（ＬＯ）模和Ｅ２模．结合Ｘ射线衍射谱，分析了因不同生长工艺导致ＧａＮ／ＧａＡｓ样品的不同结构相的喇曼谱的差异，发现ＧａＮ的喇曼谱与ＧａＮ外延层的结构相、完整性及工艺条件有关，可利用其作为检测ＧａＮ外延层结构特性的一种有用手段．对含有少量β相ＧａＮ样品，观测到了包含有β相ＧａＮ贡献的声子模式（７４０ｃｍ－１）． The Raman scattering measurements of GaN films grown by MOCVD on GaAs (001), Al2O3 (0001) and Si (111) substrates were compared and analyzed by backscattering geometry. It was observed that the Al LO mode, A1 (TO) mode, E1 (LO) mode and E2 mode. Based on the X-ray diffraction (XRD) spectra, the differences in Raman spectra of GaN / GaAs samples due to different growth processes were analyzed. It is found that the Raman spectra of GaN are related to the structure, integrity and process conditions of GaN epitaxial layers Use it as a useful tool to detect the structural characteristics of GaN epitaxial layers. For samples containing a small amount of β-phase GaN, a phonon mode (740cm-1) containing β-phase GaN contribution was observed.