本文报告了一种获得侧壁陡直的硅深槽新技术．实验中采用一种新材料──氮化锆（ＺｒＮ）作为反应离子刻蚀的掩模，所需掩模厚度约５００．采用氟基气体ＳＦ６作为刻蚀气体，并附加Ａｒ和Ｏ２，这样刻蚀过程中在槽的侧壁会形成氧化硅作为阻挡刻蚀层，结果得到了深约６μｍ，侧壁垂直接近９０°的硅深槽． This article reports a new technique for obtaining silicon deep trenches with steep sidewalls. A new material, zirconium nitride (ZrN), was used as a mask for reactive ion etching in the experiment. The desired mask thickness was about 500. Using fluorine-based gas SF6 as an etching gas and adding Ar and O2 so that silicon oxide is formed as a stopper etching layer on the sidewalls of the trench in the etching process, resulting in a depth of about 6 μm and a vertical sidewall close to 90 ° Silicon deep groove.