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针对高介电常数(k)栅堆栈金属氧化物场效应晶体管(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET)实际结构,建立了入射电子与界面缺陷共振高k栅栈结构共振隧穿模型.通过薛定谔方程和泊松方程求SiO2和高k界面束缚态波函数,利用横向共振法到共振本征态,采用量子力转移矩阵法求共振隧穿系数,模拟到栅隧穿电流密度与文献中实验结果一致.讨论了高k栅几种介质材料和栅电极材料及其界面层(IL)厚度、高k层(HK)厚度对共振隧穿系数影响.结果表明,随着HfO2和Al2O3厚度减小,栅栈结构共振隧穿系数减小,共振峰减少.随着La2O3厚度减小,共振峰减少,共振隧穿系数却增大.随着SiO2厚度增大,HfO2,Al2O3和La2O3基栅栈结构共振隧穿系数都减小,共振峰都减少.TiN栅电极HfO2,Al2O3和La2O3基栅栈比相应多晶硅栅电极栅栈结构共振隧穿系数小很多,共振峰少.
A resonant tunneling model of high-k gate stack with incident electron and interfacial defects is established for the practical structure of high-k gate-stack MOSFETs. The Schrödinger equation and Poisson equation were used to determine the bound state wave functions of SiO2 and high-k interfaces. The transverse resonance method was used to obtain the resonant eigenstates. The quantum tunneling resonant coefficient was used to calculate the tunneling tunneling coefficient. The results are consistent with the experimental data.The effects of several dielectric materials, gate electrode materials, interfacial layer (IL) thickness and high-k layer (HK) thickness on the tunneling tunneling coefficient are discussed.The results show that with the decrease of HfO2 and Al2O3 , The resonant tunneling coefficient of the gate stack decreases and the resonance peak decreases.With the decrease of the thickness of La2O3, the resonance peak decreases and the resonant tunneling coefficient increases.With the increase of SiO2 thickness, the stack structure of HfO2, Al2O3 and La2O3 The resonant tunneling coefficient decreases and the resonance peaks decrease.The resonant tunneling coefficients of the TiN gate electrodes HfO2, Al2O3 and La2O3-based gate stacks are much smaller than those of the corresponding polysilicon gate electrode gate stacks, with fewer formants.