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在不采用任何金属催化剂的条件下,运用化学气相沉积法,在Si(100)衬底上制备出高取向的As掺杂ZnO纳米线阵列。样品的X射线衍射(XRD)谱显示获得了单一取向的衍射峰,表明样品具有较好的结晶质量。场发射扫描电镜(FE-SEM)观察表明,As掺杂ZnO纳米线阵列具有均一的直径和长度,其顶部和根部直径分别为70 nm和100 nm,长度约为1.5μm。此外,在能量色散谱(EDS)中观测到了As元素的存在。在低温(11 K)光致发光谱中还观测到了与As掺杂相关的中性受主束缚激子发光(A0X),证实As元素作为受主掺杂进入ZnO晶格。As掺杂ZnO纳米线的成功制备为ZnO基纳米光电器件的实现提供了一种可行的p型掺杂方法。
Without using any metal catalyst, a highly oriented As-doped ZnO nanowire array was prepared on a Si (100) substrate by chemical vapor deposition. The X-ray diffraction (XRD) spectra of the samples show that the uniaxial diffraction peaks are obtained, indicating that the samples have good crystalline quality. Field emission scanning electron microscopy (FE-SEM) observation shows that the As-doped ZnO nanowire arrays have uniform diameters and lengths with top and bottom diameters of 70 nm and 100 nm, respectively, and a length of about 1.5 μm. In addition, the presence of As elements was observed in energy dispersive spectroscopy (EDS). Neutral acceptor bound exciton luminescence (A0X) associated with As doping was also observed in the photoluminescence spectrum at low temperature (11 K), confirming that As element doping into the ZnO lattice as an acceptor. The successful preparation of As-doped ZnO nanowires provides a feasible p-type doping method for the realization of ZnO-based nanocomposite devices.