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利用Muller_C单元,设计一种异步保存及互锁存储单元结构,该结构采用状态锁存机制和增加节点电容方法,能有效防止单粒子翻转效应的发生,同时也可提高电路抗单粒子瞬变和多节点扰动效应的能力。在0.18μm工艺条件下用此结构设计的D触发器,面积为1 422μm2,动态功耗为0.42mW,建立时间为0.2ns,保持时间为0.03ns。实验结果表明:利用触发器链验证电路,在时钟频率为20 MHz时,单粒子LET翻转阈值为31MeV·cm2/mg,比双互锁存储单元结构的抗单粒子能力提高40%。
Using Muller_C unit, an asynchronous storage and interlocking memory cell structure is designed. The structure adopts the state latch mechanism and the method of increasing the node capacitance, which can effectively prevent the occurrence of single-event flip-flop and improve the circuit’s resistance to single- Multi-node disturbance effects. The D flip-flop designed with this structure under the 0.18μm process has an area of 1 422μm2, a dynamic power consumption of 0.42mW, a settling time of 0.2ns and a hold time of 0.03ns. Experimental results show that the flip-flop threshold of single-particle LET is 31 MeV · cm2 / mg at 20 MHz clock frequency, which is 40% higher than that of double-interlock memory cell structure.