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为揭示磁控溅射辉光放电等离子体参量对Si薄膜沉积过程的本质影响,采用Langmuir探针于不同的靶电流、靶基距和氢分压条件下对直流辉光放电等离子体进行了诊断,分析了直流辉光放电等离子体参量(离子密度、离子流通量、等离子体电势、电子密度、电子温度)的变化规律,并以此为依据探讨了其对Si靶溅射过程和溅射Si粒子输运过程的影响。结果表明:不同靶电流下,距靶面3 cm处等离子体参量中离子密度、离子流通量和电子密度均随靶电流的增大而增大;靶电流为0.5A时,在靶基距从4 cm增大至21 cm过程中,离子密度和离子流通量先增大后减小,均在9 cm处出现峰值;靶基距恒为12 cm时,随氢气流量的增大,离子密度和离子流通量均增大(除氢气流量为45 ml/min(标准状态)时有所下降)。上述各参数下电子温度的变化波动性较大,但电子能量均在1~5 eV,即高能电子所占比例极小。
In order to reveal the essential influence of magnetron sputtering glow discharge plasma parameters on the deposition process of Si thin film, the DC glow discharge plasma was diagnosed by using Langmuir probe under different target current, target distance and hydrogen partial pressure , The variation regularity of DC glow discharge plasma parameters (ion density, ion flux, plasma potential, electron density, electron temperature) were analyzed. Based on the results, the influence of Si target sputtering process and sputtering Si Influence of Particle Transport Process. The results show that the ion density, ion flux and electron density increase with the increase of the target current at 3 cm from the target at different target currents. When the target current is 0.5 A, The ion density and ion flux first increased and then decreased, increasing at 4 cm to 21 cm, all at 9 cm peak. At a constant target distance of 12 cm, with the increase of hydrogen flow rate, the ion density and ion flux Ion flux increased (except when hydrogen flow rate was 45 ml / min (standard state)). The variation of electron temperature under the above parameters is more volatile, but the electron energies are all in the range of 1-5 eV, ie, the proportion of high-energy electrons is extremely small.