富士通半导体(上海)有限公司日前宣布采用其基于硅基板的氮化镓(GaN)功率器件的服务器电源单元成功实现2.5 kW的高输出功率,富士通半导体计划将于2013年下半年开始量产这些GaN功率器件。这些器件可广泛用于电源增值应用,对实现低碳社会做出重大贡献。与传统硅基功率器件相比,基于GaN的功率器件具有导通电阻低和能够进 Fujitsu Semiconductor (Shanghai) Co., Ltd. today announced the successful implementation of high output power of 2.5 kW using its server power unit based on silicon-based gallium nitride (GaN) power devices, which Fujitsu Semiconductor plans to mass-produce in the second half of 2013 power component. These devices can be widely used in power value-added applications, to make a significant contribution to the realization of low-carbon society. Compared with the traditional silicon-based power devices, GaN-based power devices have low on-resistance and can enter