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研究了运用 SOL- GEL方法制备的 Au/PZT(铅锆钛 ) /Zr O2 /Si结构电容即 MFIS(Met-al/Ferroelectric /Insulator/Semiconductor)电容的方法 ,并对其进行了 SEM、C- V特性测试及Zr O2 介质层介电常数分析 .研究了 C- V存储窗口 (Memory Window)电压与铁电薄膜和介质层厚度比的关系 ,得出 MFIS电容结构中最佳铁电薄膜和介质层厚度比为 7— 1 0左右 ,在外加电压- 5V- +5V时存储窗口可达 2 .52 V左右 .
The method of using Au-PZT (lead-zirconium-titanium) / ZrO2 / Si structure-based MFIS (Met-al / Ferroelectricity / Insulator / Semiconductor) capacitors prepared by SOL-GEL method was studied. SEM, V characteristic test and dielectric constant analysis of ZrO 2 dielectric layer.The relationship between the voltage of C-V memory window and the thickness ratio of ferroelectric thin film and dielectric layer was studied.The optimum ferroelectric thin film and dielectric of MFIS capacitor structure The layer thickness ratio is about 7-10, and the storage window can reach about 2.52 V when applied voltage - 5V - + 5V.