采用射频溅射法在单晶硅基片上沉积了(FE88ZR7B5)0.97CU0.03软磁薄膜样品,对制备态样品进行了直流电流退火处理。结果表明,最佳退火电流为800 MA,在13 MHZ频率下,最大纵向巨磁阻抗比从制备态的8%上升到最佳退火态的17%,明显提高了巨磁阻抗效应和磁场响应灵敏度。详细分析和讨论了样品的巨磁阻抗效应随退火电流变化的特性和机理。 The samples of soft magnetic film (FE88ZR7B5) 0.97CU0.03 were deposited on the monocrystalline silicon substrate by radio frequency sputtering. The prepared samples were annealed by DC current. The results show that the optimum annealing current is 800 MA. Under the frequency of 13 MHZ, the maximum longitudinal GMI increases from 8% of the as-prepared state to 17% of the optimal annealed state, which increases the GMR and the sensitivity of the magnetic field significantly . The characteristics and mechanism of the giant magneto-impedance effect of the sample with the annealing current were analyzed and discussed in detail.