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在室温下测试了 Ga P1 - x Nx(x=0 .0 5 %～ 3.1% )混晶的喇曼散射谱 .在一级喇曼散射谱中观测到了 Ga P的L O(Γ)模和强度较弱的禁戒 TO(Γ )模以及 N的局域模 (495 cm- 3) .在 N组分较高的一组样品 (x=1.3%～ 3.1% )中 ,还观察到了位于 Ga P的 L O(Γ)模和 TO(Γ)模之间的由 N导致的 L O(N)模的喇曼频移 (387cm- 1 ) ,其强度随着N浓度的增加而增强 .在二级喇曼散射谱中 ,除了观测到布里渊区中心的声子散射峰 2 L O(Γ )外 ,还观测到了布里渊区边界的声子散射峰 2 L O(L )、2 TO(X)以及 L O(L ) +TO(X) .且边界散射峰的强度比中心散射峰更强 .另外在组分 x=0 .6 %和 x=0 .81%的样品中 ,还得到了诸如来自不同 NNi 对或 N原子簇团的局域模和由 N导致的新的散射峰 .
The Raman scattering spectra of mixed crystals of Ga P1 - x Nx (x = 0.55% ~ 3.1%) were tested at room temperature.The LO (Γ) modes and intensities of Ga P were observed in first order Raman scattering spectra Weaker forbidden TO (Γ) mode and local mode of N (495 cm-3). In a group of samples with high N content (x = 1.3% ~ 3.1%), The Raman shift (387 cm-1) of the LO (N) mode caused by N between LO (Γ) mode and TO (Γ) mode increases with the increase of N concentration. In addition to the 2 LO (Γ) phonon scattering peak observed in the center of the Brillouin region, the phonon scattering peaks 2 LO (L), 2 TO (X) at the boundary of the Brillouin zone are also observed. LO (L) + TO (X), and the intensity of the boundary scattering peak is stronger than the center scattering peak. In addition, in the samples with components x = 0.6% and x = 0.81% Local modes for NNi pairs or N atom clusters and new scattering peaks due to N.