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报道了一种新型半绝缘键合SOI结构,采用化学气相淀积加外延生长键合过渡多晶硅层的方法实现了该结构.研制出的这种新结构,完整率大于85%,Si—Si键合界面接触比电阻小于5×10-4Ω·cm2.这种新结构可以广泛用于高低压功率集成电路、高可靠集成电路、MEMS、硅基光电集成等新器件和电路中.
A new type of semi-insulating bonded SOI structure was reported, which was achieved by chemical vapor deposition and epitaxial growth of bonded transition polysilicon layer. The new structure was developed with a complete rate of more than 85% and Si-Si bond The interfacial contact resistance is less than 5 × 10-4Ω · cm2. This new structure can be widely used in new devices and circuits such as high and low voltage power integrated circuits, highly reliable integrated circuits, MEMS and silicon-based optoelectronic integrated circuits.